Let’s Understand 11.0% Growth Rate of NAND Flash Memory Market on Global Aspect and Influencing Factors

The global NAND Flash Memory market was valued at US$ 46940 million in 2019 and it is expected to reach US$ 95080 million by the end of 2026, growing at a CAGR of 11.0% during 2021-2026.

NAND flash architecture was introduced by Toshiba in 1989. These memories are accessed much like block devices, such as hard disks. Each block consists of a number of pages. The pages are typically 512 or 2,048 or 4,096 bytes in size. Associated with each page are a few bytes (typically 1/32 of the data size) that can be used for storage of an error correcting code (ECC) checksum.

Samsung dominated the market in 2019, with a market share of 32.9%, followed by Kioxia and WDC, which was 18.5% and 14.4% respectively. Market concentration rate of Top 5 is 90%

Four main manufacturing markets for NAND Flash Memory are South Korea, Japan, China and United States. These four areas share similar growth rate, which is 11% during the forecasting 5 years. South Korea takes up the largest market, which was 34.2% in 2019. Japan ranks the second, producing 33% of the global NAND.

In 2019, the biggest yield was TLC NAND (60%), while QLC NAND is expected to grow at the highest rate of all types of NANDs.

The main application of NAND Flash Memory is Smartphone (35%), following up by SSD (30%) and PC (12%).

Global NAND Flash Memory Market: Drivers and Restrains

The research report has incorporated the analysis of different factors that augment the market’s growth. It constitutes trends, restraints, and drivers that transform the market in either a positive or negative manner. This section also provides the scope of different segments and applications that can potentially influence the market in the future. The detailed information is based on current trends and historic milestones. This section also provides an analysis of the volume of production about the global market and about each type from 2016 to 2027. This section mentions the volume of production by region from 2016 to 2027. Pricing analysis is included in the report according to each type from the year 2016 to 2027, manufacturer from 2016 to 2021, region from 2016 to 2021, and global price from 2016 to 2027.

A thorough evaluation of the restrains included in the report portrays the contrast to drivers and gives room for strategic planning. Factors that overshadow the market growth are pivotal as they can be understood to devise different bends for getting hold of the lucrative opportunities that are present in the ever-growing market. Additionally, insights into market expert’s opinions have been taken to understand the market better.

Global NAND Flash Memory Market: Segment Analysis

The research report includes specific segments by region (country), by manufacturers, by Type and by Application. Each type provides information about the production during the forecast period of 2016 to 2027.

Key Companies profiled in this report are Samsung, Kioxia, WDC, Micron, SK Hynix, Intel and more in terms of market share by sales, revenue, average pricing, product type, margins, recent developments etc.

Find more details at: https://www.themarketreports.com/report/global-nand-flash-memory-market-research-report

Segment by Type

  • TLC NAND
  • MLC NAND
  • SLC NAND
  • QLC NAND

Segment by Application

  • PC
  • SSD
  • Consumer Electronics
  • Others

Table of Content:

1 NAND Flash Memory Market Overview

2 NAND Flash Memory Market Competition by Manufacturers

3 NAND Flash Memory Retrospective Market Scenario by Region

4 Global NAND Flash Memory Historic Market Analysis by Type

5 Global NAND Flash Memory Historic Market Analysis by Application

6 Key Companies Profiled

7 NAND Flash Memory Manufacturing Cost Analysis

8 Marketing Channel, Distributors and Customers

9 NAND Flash Memory Market Dynamics

10 Global NAND Flash Memory Market Forecast

11 Research Finding and Conclusion

12 Methodology and Data Source

13 Forecast by Type and by Application (2022-2027)

14 Research Finding and Conclusion

15 Methodology and Data Source

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